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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3264 DESCRIPTION *High Collector-Emitter Breakdown VoltageV(BR)CEO= 230V(Min) *Good Linearity of hFE *Complement to Type 2SA1295 APPLICATIONS *Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 230 V 230 V 5 V 17 A 5 A 200 W 150 .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC TJ Junction Temperature Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3264 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V ICBO Collector Cutoff Current VCB= 230V; IE= 0 100 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 A hFE DC Current Gain IC= 5A; VCE= 4V 50 140 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain--Bandwidth Product Switching times ton Turn-on Time tstg Storage Time w w scs .i w IE= -2A; VCE= 12V .cn mi e 250 pF 60 MHz 0.3 s IC= 5A ,RL= 12, IB1= -IB2= 0.5A,VCC= 60V 2.4 s tf Fall Time 0.5 s hFE Classifications O 50-100 Y 70-140 isc Websitewww.iscsemi.cn 2 |
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